PRESENTATIONS:

  1. "Paramagnetic Relaxation of B Centers in Al-Doped 6H SiC," G. J. Gerardi, William Paterson University of NJ; The American Physical Society, March 7, 2003, Austin Texas.

  2. "Activating Ion Implants in 4H-SiC by Annealing with an AlN or BN Cap," 201st Meeting of the Electrochemical Society: Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors Session, May 14, 2002. K.A. Jones[1], P.B. Shah [1], M.H. Ervin [1], M.A. Derenge [1], R.D. Vispute [2], J.A. Freitas Jr.[3], G.J. Gerardi [4]; [1] Army Research Lab., [2] University of Maryland, [3] Naval Research Lab. [4] William Paterson University NJ.

  3. "Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN Cap," International Conference on SiC and Related Materials, Tsukuba, Japan 2001. K.A. Jones[1], P.B. Shah[1], M.A. Derenge[1], M.H. Ervin [1], G.J. Gerardi [2], J.A. Freitas Jr.[3], G.C.B. Braga [3], R.D. Vispute[4], R.P. Sharma[4], O.W. Holland[5]; [1] Army Research Lab., [2] William Paterson University NJ, [3] Naval Research Lab,[2] University of Maryland,[5] Oak Ridge National Lab.

  4. "Paramagnetic Interface Defects in HfO2 and Al2O3 Films on Silicon," 32nd IEEE Semiconductor Interface Specialists Conference; Nov. 29, 2001, Washington, D.C. ; G.J. Gerardi (William Paterson University of New Jersey), D. Neumeyer, J. H. Stathis, E. P. Gusev, N.A. Bojarczuk, and S. Guha ( IBM J.T. Watson Research Laboratory).

  5. "Temperature Dependence of the AlSi Center EPR in 6H-SiC,"G. J. Gerardi, 23rd International EPR Symposium- Rocky Mountain Conference, Denver, CO; July 30- Aug. 3, 2000.

  6. "Correlation of Pb Centers and Interface Trap Density in Oxidized (100) Silicon Wafers,"G. J. Gerardi, E.H. Poindexter, F. Rong, American Physical Society Centennial Meeting, Atlanta, GA; March 24, 1999.

  7. "Electron Paramagnetic Resonance of Al in 6H-SiC,"G. J. Gerardi, E.H. Poindexter, F. Rong, American Physical Society-March Meeting, Los Angeles CA; March 17, 1998.

  8. "EPR Determination of the Activation Energy for Impurity Conduction in 6H-SiC," G. J. Gerardi, E.H. Poindexter, F. Rong, American Physical Society-March Meeting, Kansas City, MO; March 19, 1997.

  9. "Paramagnetic Point Defects and Dopant Compensation in Silicon Carbide,"G. J. Gerardi, E.H. Poindexter, F. Rong American Physical Society-March Meeting, St. Louis, MO, March 20, 1996.

  10. "Paramagnetic Centers in Anodic and Chemically-etched Luminescent Porous Silicon," G. J. Gerardi, E.H. Poindexter, F. Rong, American Physical Society-March Meeting, San Jose, CA, March 23, 1995.

  11. "Paramagnetic Centers in Anodic and Chemically-etched Luminescent Porous Silicon,"G. J. Gerardi, E.H. Poindexter, F. Rong, American Physical Society -March Meeting, Pittsburgh, PA, March 23, 1994.

  12. "Paramagnetic Defects in Stain-Etched Porous Silicon,"G. J. Gerardi, E.H. Poindexter, F. Rong IEEE Semiconductor Interface Specialists Conference, Fort Lauderdale, FL, Dec. 5, 1993.

  13. "Paramagnetic Defects at the Si/SiO2 Interface of Oxidized Si Wafers and in Luminescent Porous Silicon, E.H. Poindexter, G. J. Gerardi, F. Rong, International Workshop on Light Emission and Electronic Properties of Nanoscale Silicon, Charlotte NC, Feb 2, 1993.

  14. "Surface Structure and Pb Centers of Oxidized and Porous Etched Silicon Wafers," G. J. Gerardi, E.H. Poindexter, F. Rong, American Physical Society - March Meeting, Seattle, WA, March 22, 1993.

  15. " Microstructure and Pb Centers in Luminescent Porous Silicon," F. Rong, G. J. Gerardi, E.H. Poindexter, American Physical Society -March Meeting, Seattle,WA, March 22, 1993.

  16. " GaAs Surface Stabilization by Vacuum Anneal with SiO," Materials Research Society Fall Meeting, Boston, Massachusetts, December 4, 1992.

  17. "Correlation of EPR and Photoluminescence Spectra of Porous Silicon," G. J. Gerardi, E.H. Poindexter, F. Rong, Materials Research Society Fall Meeting, Boston, Massachusetts, December 2, 1992.

  18. "Study of a Paramagnetic Center on the GaAs Surface," G. J. Gerardi, E.H. Poindexter, International Conference on Defects in Semiconductors, Florence, Italy, June 1992.

  19. "Electrically Detected Magnetic Resonance Near the p-Doped/n-Doped Interface of Si Junction Diodes," G. J. Gerardi, E.H. Poindexter, F. Rong, 1991 IEEE Semiconductor Interface Specialists Conference, 12 December 1991, Orlando, Florida.

  20. "Generation of a Paramagnetic Center in GaAs," G. J. Gerardi, E.H. Poindexter, F. Rong, 1992 March Meeting of the American Physical Society -March Meeting, Indianapolis, Indiana , March 17, 1992

  21. "Electrically Detected Magnetic Resonance of a Transition Metal Related Recombination Center in Silicon p-n diodes," IEEE Semiconductor Interface Specialists Conference, Orlando, FL., Dec.1991.

  22. "Thermally Stimulated Cycling of the K-center Paramagnetic State in Si3N4," G. J. Gerardi, E.H. Poindexter, F. Rong, American Physical Society, Cincinnati, Ohio, March 19,1991.

  23. "Charge Transfer at the Electrified Si-SiO2 Interface." G. J. Gerardi, E.H. Poindexter, F. Rong, American Physical Society -March Meeting, Cincinnati, Ohio, March 19,1991.

  24. "Optically Quenchable Arsenic Antisite Defects in Electron-Irradiated Semi-I nsulating GaAs." F. Rong, G. J. Gerardi, E.H. Poindexter, American Physical Society-March Meeting, Cincinnati, Ohio, March 21,1991.

  25. "Passivation of Pb Sites by Heat and Electric Field," E.H. Poindexter, G. J. Gerardi, INSULATING FILMS ON SEMICONDUCTORS (INFOS) CONFERENCE,7th Biennial European Conference, University of Liverpool, United Kingdom, April, 1991.

  26. "Electric Field Induced Proton Transfer in Oxidized Silicon: An EPR Study," E.H. Poindexter, G. J. Gerardi, International Symposium on Magnetic Resonance in Colloid and Interface Science, University of Delaware, Newark, DE., 7-11 August 1989.

  27. "Generation of Pb by Negative Corona Field Stress: An Electrochemical Model," G. J. Gerardi, E.H. Poindexter, IEEE Semiconductor Interface Specialists Conference, San Diego, CA, December 8, 1988.

  28. "Chemical and Structural Features of Inherent and Process-Induced Defects in Oxidized Silicon," E.H. Poindexter, G. J. Gerardi, Electrochemical Society, Atlanta, Georgia,1988.

  29. "Generation of Pb Centers by High Electric Fields: Thermochemical Effects,"G. J. Gerardi, E.H. Poindexter, American Physical Society - March Meeting, New Orleans, LA, March 22, 1988.

  30. "Generation of Pb Centers at the Si/SiO2 Interface by High-Field Corona Stress,"G. J. Gerardi, E.H. Poindexter, American Physical Society -March Meeting, New York, NY, March 19,1987.

  31. "EPR of the Silicon-Silicon Dioxide Interface Following High-Current Injection in CVD-Oxide MOS Capacitors," IEEE Semiconductor Interface Specialists Conference, San Diego,CA,December 12, 1986.

  32. "Interface Traps on Oxidized (100) Silicon Surfaces." American Physical Society - March Meeting , Las Vegas, NV, April 1, 1986.

  33. "Electrical Properties of Characteristic Interface States on Oxidized (100) Silicon."IEEE Semiconductor Interface Specialists Conference, Fort Lauderdale, FL, December 5,1985.

  34. "Electronic Traps and Pb Centers at the Si/SiO2 Interface,"G. J. Gerardi, E.H. Poindexter,American Physical Society, Washington, DC., April 24, 1984.

  35. "The Pb Center and Electronic Traps at the SiO2 Interface,"G. J. Gerardi, E.H. Poindexter, IEEE Semiconductor Interface Specialists Conference, Fort Lauderdale, FL, December 1, 1983.

  36. "Dynamic Nuclear Polarization in Liquids."G.J. Gerardi, NEW JERSEY INSTITUTE OF TECHNOLOGY, Newark, NJ, February 11,1983 (Invited).

  37. "The Pb Center at the Si/SiO2 Interface: Response to Electric Field, Photons and Ambient Gases." GORDON RESEARCH CONFERENCE, Tilton, NH, July 23,1982.

  38. "Thin Oxide Charge Transport Between Interface Si Centers and Bulk or Surface Traps." IEEE VLSI WORKSHOP, Hyannis Port, MA, May 18, 1982.

  39. "Transient Deactivation of SiSi3 at the Si/SiO2 Interface of Thin-oxide Silicon Wafers," G. J. Gerardi, E.H. Poindexter, American Physical Society - March Meeting, Dallas, TX, March 10,1982.

  40. "Hydrogen Bonding in Liquids Containing Free Radicals as Determined by Relaxation Methods." J. Potenza, G. J. Gerardi, American Chemical Society, Pittsburgh, PA , Nov.13, 1980.

  41. "The Unit Compressibility Law," E. H. Holleran, G.J. Gerardi, American Chemical Society, Atlantic City, NJ, 1968.